Growth of microstructures by molecular beam epitaxyGOSSARD, A. C.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1649-1655, issn 0018-9197Article

Quantum-engineering of III-V semiconductor structuresGOSSARD, A. C; FAFARD, S.Solid state communications. 1994, Vol 92, Num 1-2, pp 63-70, issn 0038-1098Article

Capacitance-voltage profiling through graded heterojucntions : theory and experimentSUNDARAM, M; GOSSARD, A. C.Journal of applied physics. 1993, Vol 73, Num 1, pp 251-260, issn 0021-8979Article

A Coherent Beam Splitter for Electronic Spin StatesPETTA, J. R; LU, H; GOSSARD, A. C et al.Science (Washington, D.C.). 2010, Vol 327, Num 5966, pp 669-672, issn 0036-8075, 4 p.Article

Direct-to-indirect band gap conversion by application of electric field in the GaSb/AlSb quantum well systemSUBBANNA, S; GOSSARD, A. C; KROEMER, H et al.Superlattices and microstructures. 1988, Vol 4, Num 6, pp 693-696, issn 0749-6036Article

Discrete plasmons in finite semiconductor multilayersPINCZUK, A; LAMONT, M. G; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 19, pp 2092-2095, issn 0031-9007Article

Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article

Femtosecond luminescence measurements in GaAsBLOCK, D; JAGDEEP SHAH; GOSSARD, A. C et al.Solid state communications. 1986, Vol 59, Num 8, pp 527-531, issn 0038-1098Article

Collector/emitter offset voltage in double-heterojunction bipolar transistorsHAYES, J. R; GOSSARD, A. C; WIEGMANN, W et al.Electronics Letters. 1984, Vol 20, Num 19, pp 766-767, issn 0013-5194Article

Anomalous polarization in the photoluminescence from Si-doped GaAs-Al_xGa_1-xAs quantum-well samplesMILLER, R. C; GOSSARD, A. C.Physical review. B, Condensed matter. 1983, Vol 28, Num 6, pp 3645-3647, issn 0163-1829Article

Step-flow growth on strained surfaces : (Al,Ga)Sb tilted superlatticesCHALMERS, S. A; KROEMER, H; GOSSARD, A. C et al.Applied physics letters. 1990, Vol 57, Num 17, pp 1751-1753, issn 0003-6951Article

Modulation-doped graded structures : growth and characterizationSUNDARAM, M; GOSSARD, A. C; HOLTZ, P. O et al.Journal of applied physics. 1991, Vol 69, Num 4, pp 2370-2375, issn 0021-8979, 6 p.Article

Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wellsJUEN, S; HOPFEL, R. A; GOSSARD, A. C et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2097-2099, issn 0003-6951Article

Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article

Complementary p-MODFET and n-HB MESFET (Al, Ga)As transistorsKIEHL, R. A; GOSSARD, A. C.IEEE electron device letters. 1984, Vol 5, Num 12, pp 521-523, issn 0741-3106Article

Quantum oscillations in the thermal conductance of GaAs/AlGaAs heterostructuresEISENSTEIN, J. P; GOSSARD, A. C; NARAYANAMURTI, V et al.Physical review letters. 1987, Vol 59, Num 12, pp 1341-1344, issn 0031-9007Article

Potential-well shape U(z)=U₀|z/(L_z/2)|^2/3 with the GaAs/Al_xGa_1-xAs systemSPUTZ, S. K; GOSSARD, A. C.Physical review. B, Condensed matter. 1988, Vol 38, Num 5, pp 3553-3555, issn 0163-1829, 3 p.Article

Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyPETROFF, P. M; GOSSARD, A. C; WIEGMANN, W et al.Applied physics letters. 1984, Vol 45, Num 6, pp 620-622, issn 0003-6951Article

p-channel (A1,Ga)As/GaAs modulation-doped logic gatesKIEHL, R. A; GOSSARD, A. C.IEEE electron device letters. 1984, Vol 5, Num 10, pp 420-422, issn 0741-3106Article

Some effects of a longitudinal electric field on the photoluminescence of p-doped GaAs-Al_xGa_1-xAs quantum well heterostructuresMILLER, R. C; GOSSARD, A. C.Applied physics letters. 1983, Vol 43, Num 10, pp 954-956, issn 0003-6951Article

Thermal characteristics of inp, InAlAs, and AlGaAsSb metamorphic buffer layers used in In_0.52Al_0.48As/In_0.53Ga_0.47As heterojunction bipolar transistors grown on GaAs substratesKIM, Y. M; RODWELL, M. J. W; GOSSARD, A. C et al.Journal of electronic materials. 2002, Vol 31, Num 3, pp 196-199, issn 0361-5235Article

Terrace width evolution during step-flow growth with multiterrace adatom migrationCHALMERS, S. A; TSAO, J. Y; GOSSARD, A. C et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7351-7357, issn 0021-8979, 1Article

Magneto-capacitance-voltage measurements of electrons in wide parabolic quantum wellsSUNDARAM, M; ENSSLIN, K; WIXFORTH, A et al.Superlattices and microstructures. 1991, Vol 10, Num 2, pp 157-165, issn 0749-6036, 9 p.Article

Band offsets from two special GaAs-Al_xGa_1-xAs quantum-well structuresMILLER, R. C; GOSSARD, A. C; KLEINMAN, D. A et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5443-5446, issn 0163-1829Article

Energy-loss rates for hot electrons and holes in GaAs quantum wellsJAGDEEP SHAH; PINCZUK, A; GOSSARD, A. C et al.Physical review letters. 1985, Vol 54, Num 18, pp 2045-2048, issn 0031-9007Article